THE EFFECT OF THE THERMAL CONDUCTIVITY OF PRECURSORS AND ITS SOLVENTS ON THE THERMAL STATE OF THE HIGH-PRESSURE APPARATUS CELL DURING CRYSTALLIZATION OF SEMICONDUCTOR COMPOUNDS OF THE AIIIBV SYSTEM
Abstract
Computer modeling was used to study the thermal state of the high-pressure apparatus (HPA) cell designed for growing InGaN crystals. Three types of solvents were considered: Fe, Fe3N, and CoCr. The effect of using an Al₂O₃ substrate on the temperature distribution and temperature gradient in the cell was analyzed. It was found that the use of an Al₂O₃ substrate reduces the values of ΔTmax, ΔTz, and gradT for all cases considered. The minimum temperature field heterogeneity is achieved when using a CoCr solvent in combination with an Al₂O₃ substrate (ΔTmax = 45 °C, ΔTz = 15 °C; gradT = 0.1–6.8 °C/mm). When using Fe3N as a solvent, it is necessary to upgrade the HPA electrical resistance system, since according to calculations, gradT exceeds 10 °C/mm.
